High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Filippo Giannazzo; Ioannis Deretzis; Giuseppe Nicotra; G. Fisichella; Quentin M. Ramasse; C. Spinella; Fabrizio Roccaforte; Antonino La Magna

doi:10.1016/j.jcrysgro.2013.10.045

JOURNAL ARTICLE

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Filippo Giannazzo Ioannis Deretzis Giuseppe Nicotra G. Fisichella Quentin M. Ramasse C. Spinella Fabrizio Roccaforte Antonino La Magna

Year: 2013 Journal: Journal of Crystal Growth Vol: 393 Pages: 150-155 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2013.10.045

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Keywords:

Graphene Materials science High-resolution transmission electron microscopy Substrate (aquarium) Transmission electron microscopy Field-effect transistor Epitaxy Optoelectronics Nanotechnology Condensed matter physics Layer (electronics) Transistor

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

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