Growth of ZnSe epilayers on Fe(001) films by migration enhanced epitaxy and self-limiting epitaxy

Abstract

Low temperature growth of ZnSe epilayers on Fe (001) films using migration enhanced epitaxy (MEE) and self-limiting epitaxy (SLE) and the growth of Fe/ZnSe/Fe multilayers is reported. All samples were grown on GaAs (001) substrates. The samples were characterized in situ by reflection high energy electron diffraction and ex situ using magnetic and transmission electron microscopy measurements. Under Zn-rich conditions, MEE and SLE preserve the magnetic character of the incorporated Fe film. In Fe/ZnSe/Fe structures, the Fe films have significantly different coercive fields and resonant linewidths which may be related to the difference in defect densities between the two layers.