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JOURNAL ARTICLE

Growth of InAs on GaAs (001) by migration-enhanced epitaxy

Bing LiangKyoung‐Su HaJing J. ZhangP. ChinC. W. Tu

Year: 1990 Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 1285 Pages: 116-116   Publisher: SPIE
DOI: 10.1117/12.20813
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Abstract

Growth of InAs epitaxial layers on GaAs (001 ) by migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE) has been studied. Reflection high-energy-electron diffraction (RHEED) patterns were studied, and persistent RHEED intensity oscillations were observed during MEE growth of InAs. The dependence of RHEED oscillation on MEE growth parameters is discussed. InAs layers grown by MEE at low substrate temperature exhibit comparable quality as MBE layers grown at higher substrate temperature.

Keywords:
Reflection high-energy electron diffraction Molecular beam epitaxy Epitaxy Electron diffraction Substrate (aquarium) Materials science Optoelectronics Reflection (computer programming) Oscillation (cell signaling) Diffraction Condensed matter physics Chemistry Optics Nanotechnology Physics Layer (electronics) Geology

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1.06
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0
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0.76
Citation Normalized Percentile
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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electronic and Structural Properties of Oxides
Physical Sciences →  Materials Science →  Materials Chemistry

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