Modeling the heterojunction bipolar transistor for integrated circuit simulation

Abstract

Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistors, a comprehensive physics-based large signal heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed.< >