Modeling of magnetic-field sensitive devices using circuit simulation tools

Abstract

An accurate but extremely simple and versatile technique for the analysis of magnetic field sensors is presented. A circuit model which allows simulation of galvanomagnetic carrier transport is developed, and has been successfully applied to a variety of magnetic field sensors, such as Hall-effect devices and bipolar magnetotransistors. This approach is attractive because device analysis and subsequent optimization can be performed in a circuit simulation environment; a feature not available with rigorous numerical approaches.< >