Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation

C. Brisset; François-Xavier Musalem; Philippe Dollfus; P. Hesto

doi:10.1007/978-3-7091-6619-2_6

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Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation

C. Brisset François-Xavier Musalem Philippe Dollfus P. Hesto

Year: 1995 Simulation of Semiconductor Devices and Processes Pages: 26-29

DOI: 10.1007/978-3-7091-6619-2_6

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Keywords:

Monte Carlo method Lorentz force Magnetic field Physics Voltage Computational physics Condensed matter physics Statistical physics Quantum mechanics Mathematics

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Magnetic Field Sensors Techniques

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation

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