GaAs bipolar integrated circuit technology

Abstract

Gallium arsenide npn transistors were fabricated successfully by ion implant techniques. The transistors showed normal current gain of 20 ∼ 25 with the substrate used as collector, and inverted current gain of 5 ∼ 6 with the substrate used as emitter. By combining ion implanted resistors and using the transistors operated in the inverted model, it is possible to design and fabricate I ² L-like integrated circuits simply.