Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Juan Cai; Martha R. McCartney; F. A. Ponce

doi:10.1557/proc-639-g11.20

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Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Juan Cai Martha R. McCartney F. A. Ponce

Year: 2000 Journal: MRS Proceedings Vol: 639 Publisher: Cambridge University Press

DOI: 10.1557/proc-639-g11.20

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Keywords:

Materials science Indium Quantum well Electric field Piezoelectricity Electron Electron holography Nitride Quantum Condensed matter physics Optoelectronics Nanotechnology Optics Physics Quantum mechanics Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

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