Tuning piezoelectric fields in InGaN/GaN quantum wells

G. Vaschenko; D. Patel; Carmen S. Menoni; S. Keller; U. K. Mishra; Steven P. DenBaars; C.N. Tomé; B. Clausen

doi:10.1109/cleo.2001.947755

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Tuning piezoelectric fields in InGaN/GaN quantum wells

G. Vaschenko D. Patel Carmen S. Menoni S. Keller U. K. Mishra Steven P. DenBaars C.N. Tomé B. Clausen

Year: 2001 Pages: 239-240

DOI: 10.1109/cleo.2001.947755

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Abstract

Summary form only given. .We provide evidence of the effect that a continuously varying piezoelectric field has on the emission of InGaN/GaN quantum wells (QWs). To isolate the effect of the piezoelectric field we performed CW and time dependent photoluminescence (PL) measurements in InGaN/GaN QWs with different Si doping in the barrier as a function of hydrostatic pressure.

Keywords:

Piezoelectricity Quantum well Photoluminescence Materials science Optoelectronics Hydrostatic pressure Doping Wide-bandgap semiconductor Gallium nitride Field (mathematics) Optics Nanotechnology Physics Composite material Laser

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Tuning piezoelectric fields in InGaN/GaN quantum wells

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