JOURNAL ARTICLE

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

S. J. HenleyA. BewickD. ChernsF. A. Ponce

Year: 2001 Journal:   Journal of Crystal Growth Vol: 230 (3-4)Pages: 481-486   Publisher: Elsevier BV
Keywords:
Cathodoluminescence Quantum well Luminescence Photoluminescence Sapphire Materials science Transmission electron microscopy Piezoelectricity Optoelectronics Scanning electron microscope Photoluminescence excitation Optics Nanotechnology Physics Laser Composite material

Metrics

8
Cited By
0.75
FWCI (Field Weighted Citation Impact)
14
Refs
0.73
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

T. M. LevinGregg H. JessenF. A. PonceL. J. Brillson

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