Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

S. J. Henley; A. Bewick; D. Cherns; F. A. Ponce

doi:10.1016/s0022-0248(01)01245-3

ScienceGate Book Chapters

JOURNAL ARTICLE

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

S. J. Henley A. Bewick D. Cherns F. A. Ponce

Year: 2001 Journal: Journal of Crystal Growth Vol: 230 (3-4)Pages: 481-486 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(01)01245-3

Get Full-Text PDF Get Analytical Report

Keywords:

Cathodoluminescence Quantum well Luminescence Photoluminescence Sapphire Materials science Transmission electron microscopy Piezoelectricity Optoelectronics Scanning electron microscope Photoluminescence excitation Optics Nanotechnology Physics Laser Composite material

Metrics

Cited By

0.75

FWCI (Field Weighted Citation Impact)

Refs

0.73

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Metrics

Citation History

Topics

Related Documents

The Influence of Defects and Piezoelectric Fields on the Luminescence from InGaN/GaN Single Quantum Wells

Tuning piezoelectric fields in InGaN/GaN quantum wells

Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells

Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells