Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures

Abstract

Erbium-doped silicon-rich nitride/silicon superlattice structures were fabricated by direct magnetron cosputtering deposition on Si substrates. Rapid thermal annealing resulted in the nucleation of small amorphous Si clusters, which efficiently sensitize 1.54μm emission via a nanosecond-fast nonresonant energy transfer process, providing an alternative route toward the fabrication of Si-compatible devices based on Er sensitization.