In this paper, a significant enhancement of the gain coefficient in Raman amplifier using nanostructured silicon clusters embedded in Si-rich nitride/Silicon superlattice structures (SRN/Si-SLs) is experimentally demonstrated. The measured gain enhancement is approximately a factor four larger than the value (0.076 cm/MW) reported for bulk silicon.
Luigi SirletoMaria Antonietta FerraraIvo RendinaSoumendra N. BasuJ. WargaR. LiLuca Dal Negro
J. WargaR. LiSoumendra N. BasuLuca Dal Negro
Luca Dal NegroR. LiJ. WargaSoumendra N. Basu
J. WargaR. LiSoumendra N. BasuLuca Dal Negro
Chang‐Hee ChoJang‐Won KangIl‐Kyu ParkSeong-Ju Park