Resistive switching effect on Al2O3/InGaAs stacks

Félix Palumbo; Pini Shekhter; Igor Krylov; D. Ritter; M. Eizenberg

doi:10.1016/j.mee.2013.03.079

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Resistive switching effect on Al2O3/InGaAs stacks

Félix Palumbo Pini Shekhter Igor Krylov D. Ritter M. Eizenberg

Year: 2013 Journal: Microelectronic Engineering Vol: 109 Pages: 83-86 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2013.03.079

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Keywords:

Stack (abstract data type) Optoelectronics Non-volatile memory Resistive touchscreen Resistive random-access memory Materials science CMOS Nanotechnology Engineering physics Computer science Electrical engineering Physics Engineering Voltage

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Resistive switching effect on Al2O3/InGaAs stacks

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