Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

Félix Palumbo; Pini Shekhter; M. Eizenberg

doi:10.1016/j.sse.2013.12.011

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Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

Félix Palumbo Pini Shekhter M. Eizenberg

Year: 2014 Journal: Solid-State Electronics Vol: 93 Pages: 56-60 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2013.12.011

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Keywords:

Materials science Semiconductor Oxide Resistive touchscreen Optoelectronics Interface (matter) Electrical conductor Metal Work (physics) Composite material Electrical engineering Metallurgy Engineering Mechanical engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

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