56.2: Invited Paper: Low Temperature Poly‐Si TFTs with Advanced Device Structures

Abstract

Abstract We report several advanced excimer laser annealed poly‐Si TFTs device structures which improve field effect mobility, reliability and kink problem. For practical display application, kink effect and reliability issues should be investigated and LBT(Lateral Body Terminal) found to be effective. Air cavity is also effective to reliability and leakage problems. High device mobility exceeding 500 cm 2 /Vsec has been obtained by excimer laser irradiation on a selectively floating a‐Si thin film.