Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

A. Helman; Khalid Moumanis; Maria Tchernycheva; A. Lusson; F. H. Julien; B. Damilano; N. Grandjean; J. Massies; Christoph Adelmann; Frédéric Fossard; Daniel Le Si Dang; B. Daudin

doi:10.1557/proc-798-y5.51

JOURNAL ARTICLE

Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

A. Helman Khalid Moumanis Maria Tchernycheva A. Lusson F. H. Julien B. Damilano N. Grandjean J. Massies Christoph Adelmann Frédéric Fossard Daniel Le Si Dang B. Daudin

Year: 2003 Journal: MRS Proceedings Vol: 798 Publisher: Cambridge University Press

DOI: 10.1557/proc-798-y5.51

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Keywords:

Quantum dot Materials science Sapphire Spectroscopy Absorption (acoustics) Electron Photoluminescence Optoelectronics Conduction band Absorption spectroscopy Transmission electron microscopy Condensed matter physics Molecular physics Nanotechnology Optics Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

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