Single dot spectroscopy of GaN/AlN self-assembled quantum dots

Abstract

We report single dot spectroscopy of hexagonal GaN/AlN self‐assembled quantum dots grown by metal organic chemical vapor deposition. Through the reduction of the number of quantum dots using sub‐micron mesa structures, we have obtained isolated photoluminescence peaks emitted by individual quantum dots. We have found that the biexciton inside a quantum dot has a negative binding energy. This negative biexciton binding energy is attributed to the effects of strong built‐in electric field.