Catalyst-free synthesis routine to indium nitride nanowires

Abstract

A vapor-solid growth strategy (catalyst free) of one-dimensional materials was employed to synthesize hexagonal wurtzite InN nanowires with large yield as much as gram quantities on a hot-wall CVD system. Morphology characterization by FE-SEM revealed uniform nanowires with 700/spl deg/C growth temperature have /spl sim/70 nm average diameter and /spl sim/5-30 micron length. EDS, XRD and micro-Raman spectroscopy characterization showed the formation of high-purity hexagonal wurtzite InN nanowires. Further structural characterizations by high-resolution TEM and low-temperature electrical characterizations (mobility and carrier density) are being undertaken.