Abstract

The technique of indium droplets catalyst is used for the synthesis of InN nanodots on (0001) sapphire substrates via metalorganic chemical vapor deposition (MOCVD) technique using trimethyindium (TMIn: (CH/sub 3/)/sub 3/In) and NH/sub 3/, The morphology evolution of the InN nanodots are studied by AFM. The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. And the XPS has been used to investigate the elemental composition of InN nanodots. Our results demonstrate that In droplets catalyst MOCVD can be a very effective way to grow InN nanodots.

Keywords:
Nanodot Indium Metalorganic vapour phase epitaxy Chemical vapor deposition Materials science Sapphire X-ray photoelectron spectroscopy Indium nitride Raman spectroscopy Catalysis Raman scattering Indium gallium nitride Chemical engineering Diffraction Nitride Nanotechnology Gallium nitride Epitaxy Optoelectronics Chemistry Layer (electronics) Optics Laser

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