A Front-Side Released Single Crystalline Silicon Piezoresistive Microcantilever Sensor

Abstract

This paper presents the design, fabrication, and characterization of a piezoresistive microcantilever sensor fabricated on silicon-on-insulator (SOI) wafers. The microcantilever consists of two silicon dioxide supporting layers and a single crystalline SOI layer in-between. The piezoresistors are implanted in the surface of the SOI layer to exploit its large piezoresistive coefficients. Laminated beam theory is employed to design the microcantilevers and the piezoresistors. A front-side releasing method is developed to suspend the microcantilevers by isotropically etching the substrate beneath the microcantilevers from the front-side of the wafers using SF ₆ plasma. The features of SOI wafers and the front-side releasing enable high uniformity and high yield for the fabrication of piezoresistive microcantilever sensors. The sensors are validated using specific binding reaction of antigen and antibody of immunoglobulin G on the sensor surface, and the experimental results show that they are promising for portable and integrated sensing applications.