Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Abstract

The performance of InGaP-based pHEMTs as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMTs with gate lengths ranging from 1.0-0.2 μm has been evaluated. Extrinsic transconductances from 341 mS/mm for 1.0 μm gate lengths to 456 mS/mm for 0.5 μm gate lengths were obtained. High-speed device operation has been verified, with f _T of 93 GHz and f _max of 130 GHz for 0.2 μm gate lengths. The dependence of DC and small-signal device parameters on gate length has been examined, and scaling effects in InGaP-based pHEMT's are examined and compared to those for AlGaAs/InGaAs/GaAs pHEMTs. High-field transport in InGaP/InGaAs heterostructures is found to be similar to that of AlGaAs/InGaAs heterostructures. The lower /spl epsiv//sub r/ of InGaP relative to AlGaAs is shown to be responsible for the early onset of short-channel effects in InGaP-based devices.