JOURNAL ARTICLE
Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs
H.K. HuangC. S. WangY.H. WangC.L. WuC. S. Chang
Year: 2003 Journal: Solid-State Electronics Vol: 47 (11)Pages: 1989-1994 Publisher: Elsevier BV
Keywords:
High-electron-mobility transistor Materials science Schottky diode Optoelectronics Schottky barrier Leakage (economics) Electrical engineering Transistor Diode Voltage Engineering
Metrics
18
Cited By
0.00
FWCI (Field Weighted Citation Impact)
11
Refs
0.14
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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