Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

Xian Lin; D. Endisch; Xiaomeng Chen; Alain E. Kaloyeros

doi:10.1557/proc-495-107

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Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

Xian Lin D. Endisch Xiaomeng Chen Alain E. Kaloyeros

Year: 1997 Journal: MRS Proceedings Vol: 495 Publisher: Cambridge University Press

DOI: 10.1557/proc-495-107

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Keywords:

Materials science Chemical vapor deposition Plasma-enhanced chemical vapor deposition Combustion chemical vapor deposition Silicon nitride Deposition (geology) Hybrid physical-chemical vapor deposition Silicon Atmospheric pressure Nitride Thin film Optoelectronics Chemical engineering Nanotechnology Carbon film Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

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