Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures

Ulf Ackelid; M. Armgarth; Anita Lloyd Spetz; I. Lundström

doi:10.1109/edl.1986.26398

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Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures

Ulf Ackelid M. Armgarth Anita Lloyd Spetz I. Lundström

Year: 1986 Journal: IEEE Electron Device Letters Vol: 7 (6)Pages: 353-355 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/edl.1986.26398

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Abstract

Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.

Keywords:

Palladium Dehydrogenation Ethanol Materials science Metal Adsorption Catalysis Oxide Hydrogen Molecule Inorganic chemistry Semiconductor Chemistry Optoelectronics Physical chemistry Organic chemistry Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Analytical Chemistry and Sensors

Physical Sciences → Chemical Engineering → Bioengineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures

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