Hydrogen-induced oxide surface charging in palladium-gate metal-oxide-semiconductor devices

Abstract

Hydrogen-induced oxide surface charging occurs in palladium-gate metal-oxide-semiconductor devices. This has been concluded from high-frequency capacitance-voltage measurements, especially in the inversion region. Measurements of transient currents induced by changes in bias, and microscopic ellipsometry on the oxide surface, support the idea of hydrogen-induced charges. It is concluded that the surface charges are protons.