JOURNAL ARTICLE

Surface Charging Induced Gate Oxide Degradation

Chun Ling ChiangChun-Yi ChengJung-Yu HsiehJianwei LiaoLee‐Wei YangT. H. YangK.C. ChenChih Yuan Lu

Year: 2012 Journal:   Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena Vol: 187 Pages: 67-70   Publisher: Scientific.net

Abstract

In dual gate process, wet strip is an important procedure to remove the photoresist. Two wet strip methods of spinning-dry and batch type were evaluated in this study. Several methods were applied to measure the surface charging density [1, 2]. The Quantox system has been well known as an inline tester with noncontact measurement such as surface voltage, surface photo voltage (SPV), flatband voltage, surface barrier high, minority carrier diffusion length, recombination life time, generation life time, and et. al [3-6]. It is an useful in-line monitor equipment for oxide quality evaluation.

Keywords:
Materials science Photoresist Optoelectronics Oxide Gate oxide Degradation (telecommunications) Voltage Spinning Diffusion Composite material Electrical engineering Transistor Layer (electronics) Metallurgy

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Topics

Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electron and X-Ray Spectroscopy Techniques
Physical Sciences →  Materials Science →  Surfaces, Coatings and Films

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