Extremely wideband 0.18-μm CMOS compact distributed low-noise amplifier

Abstract

A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-μm CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 ± 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 × 0.37 mm ² chip size including RF pads.