JOURNAL ARTICLE

A fully integrated temperature compensation technique for piezoresistive pressure sensors

Muhammad AkbarM.A. Shanblatt

Year: 1993 Journal:   IEEE Transactions on Instrumentation and Measurement Vol: 42 (3)Pages: 771-775   Publisher: Institute of Electrical and Electronics Engineers

Abstract

A fully integrated temperature compensation technique for piezoresistive pressure sensors is presented. The technique is suitable for batch fabricated sensors operable over a temperature range of -40 degrees C-130 degrees C and a pressure range of 0-310 kPa. The implementing hardware for the technique is developed and verified through PSpice and VHDL simulations. The technique is very effective for pressure values below 240 kPa and provides reasonable results for higher pressures. The technique is structurally simple and uses standard IC fabrication technologies.< >

Keywords:
Piezoresistive effect Compensation (psychology) VHDL Pressure sensor Atmospheric temperature range Fabrication Temperature measurement Materials science Integrated circuit Electronic engineering Electrical engineering Computer science Optoelectronics Mechanical engineering Engineering Computer hardware Physics Field-programmable gate array Thermodynamics

Metrics

25
Cited By
0.00
FWCI (Field Weighted Citation Impact)
8
Refs
0.23
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Advanced MEMS and NEMS Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electrical and Thermal Properties of Materials
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Mechanical and Optical Resonators
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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