Electroless Deposition of Cu-In-Ga-Se Thin Films

R. N. Bhattacharya

doi:10.1149/1.1390790

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Electroless Deposition of Cu-In-Ga-Se Thin Films

R. N. Bhattacharya

Year: 1999 Journal: Electrochemical and Solid-State Letters Vol: 2 (5)Pages: 222-222 Publisher: Electrochemical Society

DOI: 10.1149/1.1390790

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Abstract

Copper‐indium‐gallium‐selenium thin films have been prepared by electroless deposition technique on an substrate. Electroless precursors are prepared by short‐circuiting the substrate to the counter electrode. The films are characterized by inductively coupled plasma and X‐ray analysis. The device fabricated using electroless precursor films resulted in a solar cell efficiencyof 12.4%. ©1999 The Electrochemical Society

Keywords:

Materials science Gallium Electroless deposition Substrate (aquarium) Indium Deposition (geology) Thin film Electrochemistry Copper Chemical deposition Electrode Selenium Metallurgy Chemical engineering Nanotechnology Chemistry

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrodeposition and Electroless Coatings

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrocatalysts for Energy Conversion

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Electroless Deposition of Cu-In-Ga-Se Thin Films

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