Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing

Abstract

Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements showed that the as-grown SiC thin films on p-Si (111) substrates were amorphous and that the films annealed at 1100°C were crystallized with 3C-SiC (111) orientation. The results of X-ray photoelectron spectroscopy measurements showed that in the crystallized films, good stoichiometry was realized for the components of the SiC epilayer. These results indicate that SiC thin films grown on p-Si (111) substrates were crystallized by thermal treatment.