Investigation of silicon oxynitride and amorphous silicon multilayers

Abstract

Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous silicon (a-Si) multilayers grown by RF sputtering with thickness in the 10–30 nm range have been analysed by ellipsometry and TEM. Satisfactory agreement between the two techniques is obtained as regards the thickness determination of the SiON films. Disagreement with values obtained by the stylus method by extrapolation for the two types of layers is discussed. The interfaces of the SiON films are very good when n-type P doped Si is used as a target. They are wavy with average periodicity and amplitude on the order of 50 and 2 nm, respectively, when a semi-insulating Si target is used, despite the presence of a buffer layer. Hypothesis is made that P incorporation may improve the reconstruction of the SiON surface.