Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

Kuan-Lun Cheng; Huang-Chung Cheng; Wen-Horng Lee; Chiapyng Lee; Tri-Rung Yew

doi:10.1557/proc-472-463

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Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

Kuan-Lun Cheng Huang-Chung Cheng Wen-Horng Lee Chiapyng Lee Tri-Rung Yew

Year: 1997 Journal: MRS Proceedings Vol: 472 Publisher: Cambridge University Press

DOI: 10.1557/proc-472-463

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Keywords:

Materials science Dopant Volumetric flow rate Thin-film transistor Impurity Thin film Electron mobility Electrical conductor Hall effect Analytical Chemistry (journal) Chemical engineering Optoelectronics Nanotechnology Composite material Electrical resistivity and conductivity Doping Electrical engineering Layer (electronics) Thermodynamics

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

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