Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition

Abstract

Thin films of ZnO:Al have been deposited on glass substrates by a pulsed laser deposition technique employing an ArF laser ( λ=193 nm). For all experiments, a repetition rate of 10 Hz, an energy density of 1 J/cm 2 , and an irradiation time of 20–30 min (12000–18000 shots) were assumed. Optical transmittance of around 90% was observed in the visible region of the spectrum for the 150–200 nm thick film. Resistivities of 1.43×10 -4 Ω·cm and 5.62×10 -4 Ω·cm were obtained at substrate temperatures of 300°C and room temperature, respectively.