Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)

J. Henz; H. von Känel; M. Ospelt; P. Wächter

doi:10.1016/s0039-6028(87)80549-6

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Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)

J. Henz H. von Känel M. Ospelt P. Wächter

Year: 1987 Journal: Surface Science Vol: 189-190 Pages: 1055-1061 Publisher: Elsevier BV

DOI: 10.1016/s0039-6028(87)80549-6

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Keywords:

Epitaxy Materials science Annealing (glass) X-ray photoelectron spectroscopy Reflection high-energy electron diffraction Crystallography Evaporation Analytical Chemistry (journal) Optoelectronics Nanotechnology Chemistry Layer (electronics) Composite material Chemical engineering

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)

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