Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes

Abstract

The current –voltage data of the metal –insulator semiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the inter facial layer parameters.The computed current – voltage data are fitted into ideal thermionic emission diffusion equation to see the apparent effect of interfacial parameters on current transport.In presence of interfacial layer the Schottky contact behave as an ideal diode of apparently high barrier height. The behavior of apparent height and ideality factor with the presence of inter facial layer is discussed.