Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

Subhash Chand; Saroj Bala

doi:10.1016/j.physb.2006.08.011

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Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

Subhash Chand Saroj Bala

Year: 2006 Journal: Physica B Condensed Matter Vol: 390 (1-2)Pages: 179-184 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2006.08.011

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Keywords:

Thermionic emission Schottky diode Schottky barrier Diode Materials science Semiconductor Insulator (electricity) Equivalent series resistance Metal–semiconductor junction Optoelectronics Condensed matter physics Voltage Electrical engineering Physics Electron

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

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