Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

Eui‐Jung Yun; Jin Woo Jung; Byung Cheol Lee

doi:10.1016/j.jallcom.2010.02.097

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Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

Eui‐Jung Yun Jin Woo Jung Byung Cheol Lee

Year: 2010 Journal: Journal of Alloys and Compounds Vol: 496 (1-2)Pages: 543-547 Publisher: Elsevier BV

DOI: 10.1016/j.jallcom.2010.02.097

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Keywords:

Materials science X-ray photoelectron spectroscopy Analytical Chemistry (journal) Thin film Crystallinity Doping Conductivity Electrical resistivity and conductivity Irradiation Photoluminescence Acceptor Sputter deposition Sputtering Composite material Chemical engineering Chemistry Nanotechnology Optoelectronics

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

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