Metalorganic chemical vapor deposition of double-sided YBa2Cu3O7 thin films

Abstract

Thin films of YBa2Cu3O7−δ were deposited on both sides of (100) LaAlO3 substrates by metalorganic chemical vapor deposition. Using a gold-coated wafer carrier, improvements in both the transition temperature and critical current density of the film exposed to the carrier (first side) were demonstrated. Tc’s of 86–88 K and Jc’s≥106 A/cm2 at 77 K were achieved. The microwave surface resistance of both sides of double-sided samples measured at 77 K was approximately 8 mΩ at 36 GHz, scaling to less than 700 μΩ at 10 GHz.