Quantum Conductance of Defected Carbon Nanotube

Abstract

The nanometer dimensions of the carbon nanotubes (CNT) together with the unique electronic structure of a graphene sheet make the electronic properties of these one‐dimensional structures highly unusual. Since carbon nanotubes are metals or semiconductors depending sensitively on their structures. The introduction of pentagon‐heptagon pair defects into the hexagonal network of carbon nanotube can change the helicity of carbon nanotube and fundamentally alter its electronic structure. In addition to the ideal tubes, results on the quantum conductance of nanotube junctions and tubes with defects will be discussed. On‐tube metal‐semiconductor, semiconductor‐semiconductor, and metal‐metal junctions have been studied. Other defects such as substitutional impurities and pentagon‐heptagon defect pairs on tube walls are shown to produce interesting effects on the conductance. The effects of static external perturbations on the transport properties of metallic nanotubes and doped semiconducting nanotubes are examined. More over, in this present work, some theoretical studies on electronic properties of defected carbon nanotube structures will be presented.