High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

Ryuhei Kimura; Yutaka Gotoh; Takeo Matsuzawa; Kiyoshi Takahashi

doi:10.1016/s0022-0248(99)00575-8

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High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

Ryuhei Kimura Yutaka Gotoh Takeo Matsuzawa Kiyoshi Takahashi

Year: 2000 Journal: Journal of Crystal Growth Vol: 209 (2-3)Pages: 382-386 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(99)00575-8

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Keywords:

Molecular beam epitaxy Epitaxy Layer (electronics) Materials science Hexagonal crystal system Optoelectronics Diffraction Phase (matter) Buffer (optical fiber) Hexagonal phase Nitriding Crystallography Chemistry Optics Nanotechnology Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

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Summary Abstract: High purity molecular beam epitaxy grown AlGaAs

High-purity GaAs grown by molecular-beam epitaxy