JOURNAL ARTICLE

High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

Ryuhei KimuraYutaka GotohTakeo MatsuzawaKiyoshi Takahashi

Year: 2000 Journal:   Journal of Crystal Growth Vol: 209 (2-3)Pages: 382-386   Publisher: Elsevier BV
Keywords:
Molecular beam epitaxy Epitaxy Layer (electronics) Materials science Hexagonal crystal system Optoelectronics Diffraction Phase (matter) Buffer (optical fiber) Hexagonal phase Nitriding Crystallography Chemistry Optics Nanotechnology Physics

Metrics

5
Cited By
0.47
FWCI (Field Weighted Citation Impact)
7
Refs
0.66
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

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