Abstract

We report the growth and photoluminescence of very high quality Al/sub x/Ga/sub 1-x/As layers grown by molecular beam epitaxy over the 0

Keywords:
Molecular beam epitaxy Heterojunction Optoelectronics Materials science Photoluminescence Doping Epitaxy Gallium arsenide Layer (electronics) Nanotechnology

Metrics

2
Cited By
0.42
FWCI (Field Weighted Citation Impact)
2
Refs
0.56
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

Related Documents

JOURNAL ARTICLE

Summary Abstract: High purity molecular beam epitaxy grown AlGaAs

J. E. CunninghamW. T. TsangT. H. ChiuE. F. SchubertJ. A. Ditzenberger

Journal:   Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Year: 1987 Vol: 5 (3)Pages: 761-761
JOURNAL ARTICLE

High-purity GaAs grown by molecular-beam epitaxy

W. I. WangR. F. MarksL. Viña

Journal:   Journal of Applied Physics Year: 1986 Vol: 59 (3)Pages: 937-939
JOURNAL ARTICLE

High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

Ryuhei KimuraYutaka GotohTakeo MatsuzawaKiyoshi Takahashi

Journal:   Journal of Crystal Growth Year: 2000 Vol: 209 (2-3)Pages: 382-386
© 2026 ScienceGate Book Chapters — All rights reserved.