JOURNAL ARTICLE
Avalanche multiplication process in InGaAsP/InP quantum well infrared photodetectors
Lu SunBinghua SuLianggang LuJunwen XueDao Hua Zhang
Year: 2011 Vol: 98 Pages: 1913-1916
Abstract
High quality InGaAsP/InP quantum well infrared photodetectors grown by solid source molecular beam epitaxy were investigated. The photocurrent spectra are asymmetrical under positive and negative bias; it is due to the asymmetrical quantum well structures. To explain the quantum efficiency larger than 100% when bias voltage is +2 V at 40 K, avalanche multiplication process due to impact ionization must be considered.
Keywords:
Photocurrent Optoelectronics Photodetector Molecular beam epitaxy Quantum efficiency Infrared Materials science Quantum well Gallium arsenide Multiplication (music) Avalanche photodiode Quantum well infrared photodetector Photoconductivity Optics Epitaxy Physics Detector Nanotechnology Laser
Metrics
0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
11
Refs
0.14
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Related Documents
JOURNAL ARTICLE
InGaAsP/InP long wavelength quantum well infrared photodetectors
Lu SunD.H. ZhangKunjie YuanS. F. YoonK. Radhakrishnan
Journal: Thin Solid Films Year: 2006 Vol: 515 (10)Pages: 4450-4453
JOURNAL ARTICLE
Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors
Sarath D. GunapalaB. F. LevineD. RitterR. A. HammM. B. Panish
Journal: Applied Physics Letters Year: 1992 Vol: 60 (5)Pages: 636-638
JOURNAL ARTICLE
Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors
Journal: Applied Physics Letters Year: 2003 Vol: 82 (24)Pages: 4376-4378
JOURNAL ARTICLE
High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors
B. AslanH C LiuA. BezingerPhilip J. PooleM. BuchananRobert RehmH. Schneider
Journal: Semiconductor Science and Technology Year: 2004 Vol: 19 (3)Pages: 442-445
JOURNAL ARTICLE
Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach
Robert RehmH. SchneiderMartin WaltherP. KoidlG. Weimann
Journal: Applied Physics Letters Year: 2003 Vol: 82 (17)Pages: 2907-2909