InGaAsP/InP long wavelength quantum well infrared photodetectors

Lu Sun; D.H. Zhang; Kunjie Yuan; S. F. Yoon; K. Radhakrishnan

doi:10.1016/j.tsf.2006.07.126

ScienceGate Book Chapters

JOURNAL ARTICLE

InGaAsP/InP long wavelength quantum well infrared photodetectors

Lu Sun D.H. Zhang Kunjie Yuan S. F. Yoon K. Radhakrishnan

Year: 2006 Journal: Thin Solid Films Vol: 515 (10)Pages: 4450-4453 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2006.07.126

Get Full-Text PDF Get Analytical Report

Keywords:

Photocurrent Optoelectronics Molecular beam epitaxy Dark current Quantum well infrared photodetector Doping Photodetector Excited state Materials science Photoconductivity Biasing Wavelength Gallium arsenide Chemistry Quantum well Optics Epitaxy Voltage Atomic physics Physics Nanotechnology Laser

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.17

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

InGaAsP/InP long wavelength quantum well infrared photodetectors

Metrics

Citation History

Topics

Related Documents

Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors

InGaAs/InP long wavelength quantum well infrared photodetectors

Long-Wavelength Quantum Well Infrared Photodetectors

Avalanche multiplication process in InGaAsP/InP quantum well infrared photodetectors

Multispectral long-wavelength quantum-well infrared photodetectors