ZnSe‐Based MOVPE and MBE Grown LEDs

Abstract

Abstract The properties of ZnSe‐based heterostructures on (001) GaAs substrates grown by metalorganic vapor phase epitaxy (MOVPE) are compared with those grown by molecular beam epitaxy (MBE). The structural and optical properties are examined with high‐resolution X‐ray diffraction (HRXRD) and photoluminescence (PL). Furthermore the results of C – V measurements of p‐ZnSe layers doped with nitrogen are discussed and I – V characteristics and electroluminescence (EL) spectra of LEDs grown with both techniques are presented. ZnSe/Zn(SSe) MQWs are prepared with MOVPE and (ZnCd)Se/ZnSe MQWs with MBE to improve the optical efficiency of the diodes.