JOURNAL ARTICLE

Electrical characterization of doped ZnSe-based heterostructures grown by MOVPE

S. LampeMarianne GermainJ. SöllnerW. TaudtR. EvrardM. Heuken

Year: 1996 Journal:   Journal of Crystal Growth Vol: 159 (1-4)Pages: 293-297   Publisher: Elsevier BV
Keywords:
Metalorganic vapour phase epitaxy Epitaxy Doping Photoluminescence Analytical Chemistry (journal) Heterojunction Exciton Acceptor Materials science Optoelectronics Dimethylzinc Hall effect Chemistry Electrical resistivity and conductivity Condensed matter physics Layer (electronics) Nanotechnology Zinc Electrical engineering

Metrics

2
Cited By
0.65
FWCI (Field Weighted Citation Impact)
12
Refs
0.64
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

Related Documents

JOURNAL ARTICLE

Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures

Marianne GermainR. EvrardW. TaudtB. WachtendorfM. Heuken

Journal:   Materials science forum Year: 1995 Vol: 182-184 Pages: 171-174
JOURNAL ARTICLE

ZnCdSe-ZnSe heterostructures grown by MOVPE

Thierry CloîtreS. SánchezA. CherguiB. HonerlagueR.L. Aulombard

Journal:   Materials Science and Engineering B Year: 1997 Vol: 43 (1-3)Pages: 16-20
JOURNAL ARTICLE

Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRD

M Lünenbüger

Journal:   Journal of Crystal Growth Year: 1998 Vol: 184-185 (1-2)Pages: 134-138
© 2026 ScienceGate Book Chapters — All rights reserved.