JOURNAL ARTICLE

Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Rositza YakimovaCarl HemmingssonM. F. MacMillanT. YakimovErik Janzén

Year: 1998 Journal:   Journal of Electronic Materials Vol: 27 (7)Pages: 871-875   Publisher: Springer Science+Business Media
Keywords:
Schottky barrier Sputtering Epitaxy Schottky diode Work function Analytical Chemistry (journal) Materials science Photoemission spectroscopy Deep-level transient spectroscopy Semiconductor Optoelectronics Metal Thin film Chemistry Diode Silicon X-ray photoelectron spectroscopy Nanotechnology Layer (electronics) Metallurgy

Metrics

42
Cited By
0.44
FWCI (Field Weighted Citation Impact)
14
Refs
0.69
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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