Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Rositza Yakimova; Carl Hemmingsson; M. F. MacMillan; T. Yakimov; Erik Janzén

doi:10.1007/s11664-998-0112-5

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Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Rositza Yakimova Carl Hemmingsson M. F. MacMillan T. Yakimov Erik Janzén

Year: 1998 Journal: Journal of Electronic Materials Vol: 27 (7)Pages: 871-875 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-998-0112-5

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Keywords:

Schottky barrier Sputtering Epitaxy Schottky diode Work function Analytical Chemistry (journal) Materials science Photoemission spectroscopy Deep-level transient spectroscopy Semiconductor Optoelectronics Metal Thin film Chemistry Diode Silicon X-ray photoelectron spectroscopy Nanotechnology Layer (electronics) Metallurgy

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

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