Aluminum schottky contacts to n-type 4H-SiC

William R. Harrell; Jingyan Zhang; K.F. Poole

doi:10.1007/s11664-002-0047-1

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Aluminum schottky contacts to n-type 4H-SiC

William R. Harrell Jingyan Zhang K.F. Poole

Year: 2002 Journal: Journal of Electronic Materials Vol: 31 (10)Pages: 1090-1095 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-002-0047-1

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Keywords:

Schottky barrier Schottky diode Aluminium Capacitance Condensed matter physics Materials science Analytical Chemistry (journal) Chemistry Optoelectronics Electrode Composite material Physics

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electromagnetic Compatibility and Noise Suppression

Physical Sciences → Engineering → Electrical and Electronic Engineering

Aluminum schottky contacts to n-type 4H-SiC

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