Infrared absorptance studies of hydrogenated silicon nitride films at low temperatures

Man Mohan Pradhan; Manju Arora

doi:10.1016/0030-4018(92)90585-f

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Infrared absorptance studies of hydrogenated silicon nitride films at low temperatures

Man Mohan Pradhan Manju Arora

Year: 1992 Journal: Optics Communications Vol: 94 (5)Pages: 428-435 Publisher: Elsevier BV

DOI: 10.1016/0030-4018(92)90585-f

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Keywords:

Materials science Silicon nitride Plasma-enhanced chemical vapor deposition Absorptance Infrared Silicon Fourier transform infrared spectroscopy Substrate (aquarium) Chemical vapor deposition Analytical Chemistry (journal) Absorption (acoustics) Boron nitride Infrared spectroscopy Optics Optoelectronics Nanotechnology Chemistry Composite material Organic chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Infrared absorptance studies of hydrogenated silicon nitride films at low temperatures

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