Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

Sachiko Ono; Shunsuke Kotaka; Hidetaka Asoh

doi:10.1016/j.electacta.2013.06.025

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Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

Sachiko Ono Shunsuke Kotaka Hidetaka Asoh

Year: 2013 Journal: Electrochimica Acta Vol: 110 Pages: 393-401 Publisher: Elsevier BV

DOI: 10.1016/j.electacta.2013.06.025

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Keywords:

Isotropic etching Etching (microfabrication) Materials science Anodizing Anode Fabrication Anisotropy Microstructure Porosity Nanotechnology Optoelectronics Layer (electronics) Composite material Electrode Aluminium Optics Chemistry

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Anodic Oxide Films and Nanostructures

Physical Sciences → Materials Science → Materials Chemistry

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

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