Electrical Properties of Epitaxial Silicide-Silicon Interfaces

R. T. Tung; A. F. J. Levi; J. M. Gibson; K.K. Ng; A. Chantre

doi:10.1557/proc-54-457

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Electrical Properties of Epitaxial Silicide-Silicon Interfaces

R. T. Tung A. F. J. Levi J. M. Gibson K.K. Ng A. Chantre

Year: 1985 Journal: MRS Proceedings Vol: 54 Publisher: Cambridge University Press

DOI: 10.1557/proc-54-457

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Keywords:

Materials science Schottky barrier Silicide Schottky diode Epitaxy Optoelectronics Silicon Transmission electron microscopy Condensed matter physics Nanotechnology Layer (electronics)

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Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

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